Type Designator: 2SD669
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
2SD669 Transistor Equivalent Substitute - Cross-Reference Search
2SD669 Datasheet (PDF)
..1. Size:439K utc
2sd669 2sd669a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel2SD669xL-x-AB3-R 2SD669xG-
..2. Size:32K hitachi
2sd669.pdf
2SD669, 2SD669ASilicon NPN EpitaxialADE-208-899 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCE
..3. Size:110K jiangsu
2sd669 2sd669a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitVCBO Collector- Base Voltage 180 V VCEO Collector-E
..4. Size:245K wietron
2sd669.pdf
2SD669/2SD669ANPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SD669 2SD669A UnitVCBO180 180 VCollector-Emitter VoltageVCEO120 160 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 VCollector Current IC1.5 APD1.0 WPower DisspationTj150 CJunction T
..5. Size:1131K blue-rocket-elect
2sd669 2sd669a.pdf
2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A)Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
..6. Size:280K inchange semiconductor
2sd669 2sd669a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO:120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collect
..7. Size:209K inchange semiconductor
2sd669.pdf
isc Silicon NPN Power Transistor 2SD669DESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA
0.1. Size:265K mcc
2sd669-b-c-d 2sd669a-b-c.pdf
0.2. Size:36K hitachi
2sd669a.pdf
2SD669, 2SD669ASilicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base voltage VEBO
0.3. Size:236K secos
2sd669-669a.pdf
2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C2.70.27.60.2FEATURES 1.30.24.00.1Power dissipation 10.80.2 PCM : 1mWTamb=25 O3.1 0.1Collector current 1 2 32.20.1 ICM : 1.5 A1.270.1Collector-base voltage 15.50.2V
0.4. Size:247K jiangsu
2sd669al.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt
0.5. Size:180K lge
2sd669-2sd669a to-126.pdf
2SD669/2SD669A(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features2.5007.4002.9001.1007.800 Low frequency power amplifier complementary pair 1.500with 2SB649/A 3.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.6000.0000.300Symbol Parameter Value Units11.000VCBO Collector- Base Voltage 180 V 2.
0.6. Size:665K blue-rocket-elect
2sd669ad.pdf
2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
0.7. Size:473K blue-rocket-elect
2sd669a.pdf
2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power
0.8. Size:163K nell
2sd669am-a.pdf
RoHS RoHS 2SD669AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose NPN Power Transistor1.5A / 120V, 160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SB649AM/2SB649AM-ANPNEAll dimensions in millimeters
0.9. Size:216K inchange semiconductor
2sd669a.pdf
isc Silicon NPN Power Transistor 2SD669ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM R
